Revealing the effect of AIN surface pits on GaN remote epitaxy

Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form freestanding membranes. However, harsh epitaxy conditions can often cause damage to the template materials, such as in the case of remote epitaxy of GaN thin films, promising materials for light-emitting diodes, photodetectors, and power electronic devices, on graphene/AlN templates.